A transistor is a semiconductor device used to ….. or….. electrical signals and power.
amplify
switch
pnp
npn
the arrow always pointer on the negative
REMEBER VERY IMPORTANT
to know where is the emeter look at the middle arrow inside this circle , the place near to this arrow is always be the emeter
IC≈…
VBE=…
@base
IE=
ß=
Alpha(α)=
Remember this
ICEO (the collector-to-emitter current with the base leg open) =
.•. IB≈0
Because ……..
IE
0.7V
IB+IC
ß= IC/IB
α= IC/IE OR IC/IE - (ICBO = I of collector) if the emitter is open(IE=0)
Then ICEO (the collector-to-emitter current with the base leg open) =
ICBO/1-α
OR
BxICBO
CEO bفcbo
Because IC=IE with different voltage(VCB)
Explanation: In the saturation region of a Bipolar Junction Transistor (BJT): 1. Both the base-emitter junction and the base-collector junction are forward-biased.
2. The transistor conducts heavily, and the collector current (Ic) reaches its maximum value, limited primarily by the external circuit.
3. The transistor is "fully on," acting like a closed switch.
Tell me the relation that connects Alpha with Beta
Various types of general-purpose or switching transistors:
(a) ……
(b) …..
(c) ….
low power
medium power
medium to high power.
What is the cutoff region in a BJT common-emitter configuration?
A) The collector current is at its maximum
B) The base current is zero
C) Both junctions are forward-biased
D) The collector-emitter current is very high
B
The common-collector configuration is used primarily for impedance matching purposes since it has a …. input impedance and …. output impedance,
opposite to that of the common-base and common-emitter configurations.➢ The output characteristics of the common-collector configuration are the same as for the ……. configuration
And used for impedance isolation and signal amplification
High
Low
common-emitter
What does a transistor tester measure?
Q point is consder ….
IB
What is the type of this circuit 👇👇
And what is the value of VE in it
What is the purpose of c1?
= -12+IBx240x1000+0.7=0
.•. IB=✔️
= -VCC+ICxRC+VCE=0
= -12+(2.35x10^-3)x2.2x1000+VCE=0
.•. VCE=✔️
In saturation point ic=0
And in cutoff
Q point changing represented by ……
Fixed Biasing Configuration (self)
0 (so VBE=VB=0.7)
C1's role is specifically about AC signal coupling while blocks DC signal
IB OR IC BECAUSE IB≈IC
If IB INCREASE SO Q POINT INCREASE AND Vice versa
What is the value of X from the opposite figure 👇👇
VCC
IC saturation (sat)
At sat VCE =….
So RC =….
IBQ=…..
20
10
0
From kershof
25
What is the type of this circuit
Tell me IB and VC and VE (when write one symbol means the symbol and the ground)
Emitter-Bias Configuration
Ans 1
-20+IBx430k+0.7+IEx1K=0
Remember this to make one variable to can answer it
Ans 2
VC-VCE-IEx1K =0
Ans 3
VE =IE(IC)xRE
Note
IE≈IC
What is the type of this circuit and solve this👇👇 by Exact method
Tell me what is the IB
_____________________________
Solve same question by using approximatemethod but Tell me the condition law which tell you if you can solve it by this method or not
Voltage-divider Bias Configuration
If ƁRE =>10R2
So you can use this method of solution
@برين بس
VB = VTh
Solve (a) and (b)
Av = Voltage Gain
Av = Vout/Vin
Av = 20log(10)db
b) sol 👇
what is the
Av
Ai
Ap
@عند الساد sese عنده فلوس صفر
In a class …. amplifier, the transistor conducts for the full cycle of the input signal (360°) This means the transistor is always ….. and It’s set in the middle of the load line to allow maximum swing of the output signal without distortion.
Used in ….-power applications (typically less than 1 W)
The output signal is ….. out of phase with the input signal (phase)
A
on
low
180°
Class … amplifier is a type of amplifier where the transistor conducts for only half of the input signal cycle (180°). This means the transistor is "…" for the other half of the cycle.
OFF
Class B amplifiers are more efficient than Class …. amplifiers because they only draw power when there’s an …..
A disadvantage of Class B amplifiers is ….., which occurs when the input signal is near zero and neither transistor is fully conducting
input signal.
crossover distortion
The efficiency of a Class A amplifier is approximately:
a) 25%
b) 50%
c) 78.5%
d) 100%
The maximum theoretical efficiency of a Class B amplifier is:
25%
78.5%
A Class …. amplifier ,The transistors are biased slightly above cutoff, so they conduct for more than 180° but less than 360° of the input signal cycle.
This reduces …. while maintaining higher efficiency than Class A amplifiers.
AB
A ….uses two transistors to handle the positive and negative halves of the input signal.
One transistor "pushes" current to the load during the positive half-cycle, and the other transistor "pulls" current from the load during the negative half-cycle.
Push-Pull Amplifier
Choose the correct answer
Choice B
FETs are:
a) Current-controlled devices
b) Voltage-controlled devices
c) Power-controlled devices
d) Frequency-controlled devices
The two major types of FETs are:
a) JFET and MOSFET
b) BJT and JFET
c) MOSFET and IGBT
d) JFET and HEMT
Which of the following are advantages of FETs over BJTs? (Select all that apply)
a) High input resistance
b) Better temperature stability
c) Smaller size
d) Higher power consumption
e) Lower cost
a,b,c
At the FET (ex JFET) Ig(gate)=…
Because gate-source junction is always ….
to control the channel width and drain current (ID)
@I base zero because it fat
And I..=I…
Zero
reverse-biased
ID=IS
S=source
D=Drain
In JFET
For an n-channel JFET, the gate is made of …-type material.
For a p-channel JFET, the gate is made of …-type material.
@charge
p
n
when VGS decreases (increases to understand it only)(it's become more negative number) ID ….. because depletion region…..
Remember: The depletion region is wider near the drain
When Vgs = 0, the channel is ….
So ID =I….
And tell me it's law
Therfore this statement is true
The JFET can act as a variable resistor controlled by (VGS).
We make VGS the negative with positive to make reverse-biased to make Ig=0
Decreases
Increases
fully open (ID is highest value)
IDSS (which is the highest value)
True or false?
Vps is increased over Vp (pinch-off) voltage, the current will saturate (IDSS which it's the largest ID)
The JFETamplifiers configurations are:
1) common-source,
2) common-drain,
3) common-gate.
True
What is the law of
ID
VGS
Gs فوق
Ds تحت
MOSFET has no ….. structure;
the gate of the MOSFET is insulated from the channel by a ….. layer.
And also like JFET
The relation between VGS and ID
Vth is the smallest Vgs with make the bridge
VDs is voltage of drain
pn junction
silicon dioxide (SiO2 )
Type 2 with capacitor (we can't neglect re because RE will be 0 and we can't decide on 0)
What is the main types of MOSFET?
Depletion (D) MOSFETs, Enhancement (E) MOSFETs
@D
Describe the main characteristics of Practical Op-Amp?
(answer): ① high voltage gain② high input resistance③ low output resistance.
Remember
It's not expansive and reliable
What is the role of RG in JFET CS amplifier circuit?(answer):
The RG provide a high input impedance to the amplifier.
@رج يعني dance 💃
Last changed7 days ago